Lee, Ju-Hun Kang, Seung-Youl Yeon, Changbong Yang, Jong-Heon Jung, Jaesun Tan, Kok Chew Kim, Kitae Yi, Yeonjin Park, Soohyung Hwang, Chi-Sun Moon, Jaehyun 2024-07-11T06:00:39Z 2024-07-11T06:00:39Z 2024-07-11 2024-09 0957-4484 https://pubs.kist.re.kr/handle/201004/150209 This study introduces a novel heteroleptic indium complex, which incorporates an amidinate ligand, serving as a high-temperature atomic layer deposition (ALD) precursor. The most stable structure was determined using density functional theory and synthesized, demonstrating thermal stability up to 375 degrees C. We fabricated indium oxide thin-film transistors (In2O3 TFTs) prepared with DBADMI precursor using ALD in wide range of window processing temperature of 200 degrees C, 300 degrees C, and 350 degrees C with an ozone (O3) as the source. The growth per cycle of ALD ranged from 0.06 to 0.1 nm cycle(-1 )at different deposition temperatures. X-ray diffraction and transmission electron microscopy were employed to analyze the crystalline structure as it relates to the deposition temperature. At a relatively low deposition temperature of 200 degrees C, an amorphous morphology was observed, while at 300 degrees C and 350 degrees C, crystalline structures were evident. Additionally, x-ray photoelectron spectroscopy analysis was conducted to identify the In-O and OH-related products in the film. The OH-related product was found to be as low as 1% with an increase the deposition temperature. Furthermore, we evaluated In2O3 TFTs and observed an increase in field-effect mobility, with minimal change in the threshold voltage (V (th)), at 200 degrees C, 300 degrees C, and 350 degrees C. Consequently, the DBADMI precursor, given its stability at highdeposition temperatures, is ideal for producing high-quality films and stable crystalline phases, with wide processing temperature range makeing it suitable for various applications. English Institute of Physics Publishing Wide process temperature of atomic layer deposition for In2O3 thin-film transistors using novel indium precursor (N,N'-di-tert butylacetimidamido)dimethyllindium Article 10.1088/1361-6528/ad5848 1 Nanotechnology, v.35, no.37 Nanotechnology 35 37 N scie scopus 001255121000001 2-s2.0-85197364488 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article In precursor (N, N &apos -di-tert-butylacetimidamido)dimethyllindium (DBDMI) atomic layer deposition thin-film transistors indium oxide semiconductor high temperature deposition