Ha, Hyoun Ji Kang, Seong Jae Jeong, Jun Hyung Ma, Jin Hyun Park, Min Ho Kim, Wonsik Ha, Aelim Kim, Seunghwan Park, Soohyung Kang, Seong Jun 2024-08-01T06:00:54Z 2024-08-01T06:00:54Z 2024-08-01 2024-07 1944-8244 https://pubs.kist.re.kr/handle/201004/150346 We introduce an enhanced performance organic-inorganic hybrid p-n junction photodiode, utilizing poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and ZnO, fabricated through a solution-based process at a low temperature under 100 degrees C. Improved interfacial electronic structure, characterized by shallower Gaussian standard deviation of the density-of-state distribution and a larger interface dipole, has resulted in a remarkable fold increase of similar to 10(2) in signal-to-noise ratio for the device. This photodiode exhibits a high specific detectivity (2.32 x 10(11) Jones, cm x root Hz x W-1) and exceptional rectification ratio (5.47 x 10(4) at +/- 1 V). The primary light response, concentrated in the optimal thickness of the PTAA layer, contributes to response over the entire UVA region and rapid response speed, with rise and fall times of 0.24 and 0.64 ms, respectively. Furthermore, this work demonstrates immense potential of our device for health monitoring applications by enabling real-time and continuous measurements of UV intensity. English American Chemical Society Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p-n Junction Photodiode with a Fast Responsive and High Rectification Ratio Article 10.1021/acsami.4c05494 1 ACS Applied Materials & Interfaces, v.16, no.30, pp.40139 - 40148 ACS Applied Materials & Interfaces 16 30 40139 40148 N scie scopus 001272804400001 2-s2.0-85199088978 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article SKIN-CANCER PHOTODETECTORS UVA p-n junction ZnO PTAA photodiode ultraviolet low temperature energy levelalignment transparent photodetector