Yang, Eunyeong Hong, Sekwon Ma, Jiwon Park, Sang-Joon Lee, Dae Kyu Das, Tanmoy Ha, Tae-Jun Kwak, Joon Young Chang, Jiwon 2024-08-29T06:00:39Z 2024-08-29T06:00:39Z 2024-08-29 2024-08 1936-0851 https://pubs.kist.re.kr/handle/201004/150519 In this work, we report an n-type metal-oxide-semiconductor (nMOS) inverter using chemical vapor deposition (CVD)-grown monolayer WS2 field-effect transistors (FETs). Our large-area CVD-grown monolayer WS2 FETs exhibit outstanding electrical properties including a high on/off ratio, small subthreshold swing, and excellent drain-induced barrier lowering. These are achieved by n-type doping using AlOx/Al2O3 and a double-gate structure employing high-k dielectric HfO2. Due to the superior subthreshold characteristics, monolayer WS2 FETs show high transconductance and high output resistance in the subthreshold regime, resulting in significantly higher intrinsic gain compared to conventional Si MOSFETs. Therefore, we successfully realize subthreshold operating monolayer WS2 nMOS inverters with extremely high gains of 564 and 2056 at supply voltage (V-DD) of 1 and 2 V, respectively, and low power consumption of similar to 2.3 pW<middle dot>mu m(-1) at V-DD = 1 V. In addition, the monolayer WS2 nMOS inverter is further expanded to the demonstration of logic circuits such as AND, OR, NAND, NOR logic gates, and SRAM. These findings suggest the potential of monolayer WS2 for high-gain and low-power logic circuits and validate the practical application in large areas. English American Chemical Society Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime Article 10.1021/acsnano.4c04316 1 ACS Nano, v.18, no.34, pp.22965 - 22977 ACS Nano 18 34 22965 22977 N scie scopus 001292271700001 2-s2.0-85201518594 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article THIN-FILM TRANSISTORS COMPLEMENTARY INVERTERS MOS2 TRANSISTORS PERFORMANCE TRANSITION MOBILITY PHOTOLUMINESCENCE DENSITY MOSFET two-dimensional materials tungsten disulfide aluminum oxide doping high-gain low-power nMOS inverter nMOS logic circuit