Kim, Yeonhwa Shin, Hyun-Beom Ju, Eunkyo Madarang, May Angelu Chu, Rafael Jumar Laryn, Tsimafei Kim, Taehee Lee, In-Hwan Kang, Ho Kwan Choi, Won Jun Jung, Daehwan 2024-08-29T06:30:19Z 2024-08-29T06:30:19Z 2024-08-29 2024-09 https://pubs.kist.re.kr/handle/201004/150524 Direct epitaxy of III-V materials on Si is a promising approach for highly stable, scalable, and efficient Si-based multijunction solar cells. However, challenges lie in overcoming epitaxial dislocations and residual thermal strain generated by lattice constant and thermal-expansion-coefficient mismatches, respectively. Herein, a 15.2% efficient InGaP/GaAs/Si triple-junction solar cell with an open-circuit voltage of 2.36 V by using In0.10Al0.16Ga0.74As digital-alloy dislocation filter layers is first demonstrated. The filter layers are utilized in the n-GaAs buffer on Si to reduce threading dislocation density to 4 x 10(7) cm(-2) while maintaining optical transparency to Si bottom cell. Then, the impacts of threading dislocations and residual tension on InGaP/GaAs/Si cells are systematically investigated by comparing them to the co-grown InGaP/GaAs tandem cells on a native GaAs substrate. Based on the comparative analysis, a strategy to suppress material deformation and defect formation toward 30% efficient InGaP/GaAs/Si triple-junction solar cells is proposed. English WILEY-V C H VERLAG GMBH Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple-Junction Solar Cells Article 10.1002/solr.202400318 1 Solar RRL, v.8, no.18 Solar RRL 8 18 N scie scopus 001295367500001 2-s2.0-85201553454 Energy & Fuels Materials Science, Multidisciplinary Energy & Fuels Materials Science Article GAAS SI GROWTH SEMICONDUCTORS EFFICIENCY SUBSTRATE LIFETIME GAP/SI dislocations epitaxial growth monolithic III-V/Si tandem solar cell thermal tension