Kim, Donghyeok Park, Young Ran Kim, Chanhyeok Lee, Seungguan Min, Hanul Wang, Gunuk 2024-09-05T08:30:06Z 2024-09-05T08:30:06Z 2024-09-05 2024-09 https://pubs.kist.re.kr/handle/201004/150545 Halide perovskite materials have emerged as highly promising candidates for a wide range of electrical and optical devices due to their high charge carrier mobility, tunable band gaps, and facile manufacturability. However, their potential use as active channels in field-effect transistor (FET) memory devices remains underexplored, primarily due to challenges related to operational instability and the control of interfaces and crystallinity. Here, we present a significant advancement in perovskite field-effect transistor (PeFET) memory devices, utilizing large grain-sized alpha-phase formamidinium lead triiodide (FAPbI(3)). The alpha-phase FAPbI(3) was synthesized using a black powder method with MACl and MDACl(2) additives, resulting in enhanced crystallinity and a well-defined energy bandgap. Additionally, it demonstrated excellent stability to external environmental conditions, such as high humidity (>= 40 RH %) and thermal conditions (<= 150 degrees C). Using this method, the fabricated PeFET memory devices demonstrated anticlockwise p-type switching behavior with an I-ON/I-OFF ratio of 1.34 +/- 0.54 x 10(3) and durability over 100 continuous sweeping cycles under ambient conditions. We propose a switching mechanism that relies on the combined effects of mixed ionic-electronic conduction and charge trapping and detrapping at the interface between FAPbI(3) and SiO2. English AMER CHEMICAL SOC Perovskite Field-Effect Transistor Memory Employing a Large Grain Sized α-Phase Formamidinium Lead Triiodide Article 10.1021/acsaelm.4c01022 1 ACS Applied Electronic Materials, v.6, no.9, pp.6561 - 6568 ACS Applied Electronic Materials 6 9 6561 6568 N scie scopus 001300213200001 2-s2.0-85202502186 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article SOLAR-CELLS HIGH-PERFORMANCE ION MIGRATION DEGRADATION EFFICIENT halide perovskite FAPbI(3) field-effecttransistor memory mixed ionic-electronic conduction transport charge trapping/detrapping transport