Moon, Taehwan Soh, Keunho Kim, Jong Sung Kim, Ji Eun Chun, Suk Yeop Cho, Kyungjune Yang, J. Joshua Yoon, Jung Ho 2024-09-14T05:30:28Z 2024-09-14T05:30:28Z 2024-09-13 2024-10 2051-6347 https://pubs.kist.re.kr/handle/201004/150571 Inspired by the functions of biological neural networks, volatile memristors are essential for implementing neuromorphic computing. These devices enable large-scale and energy-efficient data processing by emulating neural functionalities through dynamic resistance changes. The threshold switching characteristics of volatile memristors, which are driven by various mechanisms in materials ranging from oxides to chalcogenides, make them versatile and suitable for neuromorphic computing systems. Understanding these mechanisms and selecting appropriate devices for specific applications are crucial for optimizing the performance. However, the existing literature lacks a comprehensive review of switching mechanisms, their compatibility with different applications, and a deeper exploration of the spatiotemporal processing capabilities and inherent stochasticity of volatile memristors. This review begins with a detailed analysis of the operational principles and material characteristics of volatile memristors. Their diverse applications are then explored, emphasizing their role in crossbar arrays, artificial receptors, and neurons. Furthermore, the potential of volatile memristors in artificial inference systems and reservoir computing is discussed, due to their spatiotemporal processing capabilities. Hardware security applications and probabilistic computing are also examined, where the inherent stochasticity of the devices can improve the system robustness and adaptability. To conclude, the suitability of different switching mechanisms for various applications is evaluated, and future perspectives for the development and implementation of volatile memristors are presented. This review aims to fill the gaps in existing research and highlight the potential of volatile memristors to drive innovation in neuromorphic computing, paving the way for more efficient and powerful computational paradigms. This review explores various mechanisms enabling threshold switching in volatile memristors and introduces recent progress in the implementation of neuromorphic computing systems based on these mechanisms. English Royal Society of Chemistry Leveraging volatile memristors in neuromorphic computing: from materials to system implementation Article 10.1039/d4mh00675e 1 Materials Horizons, v.11, no.20, pp.4840 - 4866 Materials Horizons 11 20 4840 4866 N scie scopus 001298302000001 2-s2.0-85202169080 Chemistry, Multidisciplinary Materials Science, Multidisciplinary Chemistry Materials Science Review CHALLENGES MECHANISM IMPACT FILMS THRESHOLD CONDUCTANCE