Lee, Jae Hyuck Kim, Gwan Woo Song, Inkyung Kim, Yejin Lee, Yeonjae Yoo, Sung Jong Cho, Deok-Yong Rhim, Jun-Won Jung, Jongkeun Kim, Gunn Kim, Changyoung 2024-09-14T06:30:39Z 2024-09-14T06:30:39Z 2024-09-13 2024-09 1936-0851 https://pubs.kist.re.kr/handle/201004/150588 In condensed matter physics, the Kagome lattice and its inherent flat bands have attracted considerable attention for their prediction and observation to host a variety of exotic physical phenomena. Despite extensive efforts to fabricate thin films of Kagome materials aimed at modulating flat bands through electrostatic gating or strain manipulation, progress has been limited. Here, we report the observation of a d-orbital hybridized Kagome-derived flat band in Ag/Si(111) root 3 x root 3 as revealed by angle-resolved photoemission spectroscopy. Our findings indicate that silver atoms on a silicon substrate form an unconventional distorted breathing Kagome structure, where a delicate balance in the hopping parameters of the in-plane d-orbitals leads to destructive interference, resulting in double flat bands. The exact quantum destructive interference mechanism that forms the flat band is uncovered in a rigorous manner that has not been described before. These results illuminate the potential for integrating metal-semiconductor interfaces on semiconductor surfaces into Kagome physics, particularly in exploring the flat bands of ideal 2D Kagome systems. English American Chemical Society Atomically Thin Two-Dimensional Kagome Flat Band on the Silicon Surface Article 10.1021/acsnano.4c05398 1 ACS Nano, v.18, no.37, pp.25535 - 25541 ACS Nano 18 37 25535 25541 N scie scopus 001302834700001 2-s2.0-85202830078 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article silicon two-dimensional Kagome flat bands d-orbital ARPES DFT