Shin, Hongjoo Hong, Doosun Cho, Hyunjin Jang, Hanhwi Kim, Geon Yeong Song, Kyeong Min Choi, Min-Jae Kim, Donghun Jung, Yeon Sik 2024-10-10T08:00:24Z 2024-10-10T08:00:24Z 2024-10-10 2024-09 https://pubs.kist.re.kr/handle/201004/150782 Although GaP, a III-V compound semiconductor, has been extensively utilized in the optoelectronic industry for decades as a traditional material, the inherent indirect bandgap nature of GaP limits its efficiency. Here, we demonstrate an indirect-to-direct bandgap transition of GaP through the formation of quantum shells on the surface of ZnS nanocrystals. The ZnS/GaP quantum shell with a reverse-type I heterojunction, consisting of a monolayer-thin GaP shell grown atop a ZnS core, exhibits a record-high photoluminescence quantum yield of 45.4% in the violet emission range (wavelength = 409 nm), validating its direct bandgap nature. Density functional theory calculations further reveal that ZnS nanocrystals, as the growth platform for GaP quantum shells, play a crucial role in the direct bandgap formation through hybridization of electronic states with GaP. These findings suggest potential for achieving direct bandgaps in compounds that are constrained by their inherent indirect energy gaps, offering a strategy for tailoring energy structures to significantly improve efficiencies in optoelectronics and photovoltaics. The indirect bandgap in GaP semiconductors limits its efficiency in optoelectronic applications. Here the authors realize a direct bandgap by forming ultrathin GaP quantum shells on ZnS nanocrystals, greatly enhancing luminescence efficiency. English Nature Publishing Group Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals Article 10.1038/s41467-024-52535-8 1 Nature Communications, v.15, no.1 Nature Communications 15 1 Y scie scopus 001314910500018 2-s2.0-85204176805 Multidisciplinary Sciences Science & Technology - Other Topics Article INP EFFICIENT EMISSION BLUE