Lee, Dong Hyun Kim, Ji Eun Cho, Yong Hyeon Kim, Sojin Park, Geun Hyeong Choi, Hyojun Lee, Sun Young Kwon, Taegyu Kim, Da Hyun Jeong, Moonseek Jeong, Hyun Woo Lee, Younghwan Lee, Seung-Yong Yoon, Jung Ho Park, Min Hyuk 2024-10-26T06:30:41Z 2024-10-26T06:30:41Z 2024-10-25 2024-11 2051-6347 https://pubs.kist.re.kr/handle/201004/150859 A self-rectifying ferroelectric tunnel junction that employs a HfO2/ZrO2/HfO2 superlattice (HZH SL) combined with Al2O3 and TiO2 layers is proposed. The 6 nm-thick HZH SL effectively suppresses the formation of non-ferroelectric phases while increasing remnant polarization (P-r). This enlarged P-r modulates the energy barrier configuration, consequently achieving a large on/off ratio of 1273 by altering the conduction mechanism from off-state thermal injection to on-state Fowler-Nordheim tunneling. Moreover, the asymmetric Schottky barriers at the top TiN/TiO(2)and bottom HfO2/Pt interfaces enable a self-rectifying property with a rectifying ratio of 1550. Through calculations and simulations it is found that the device demonstrates potential for achieving an integrated array size exceeding 7k while maintaining a 10% read margin, and shows potential for application in artificial synapses for neuromorphic computing with an image recognition accuracy above 92%. Finally, the self-rectifying behavior and device-to-device variation reliability are confirmed in a 9 x 9 crossbar array structure. English Royal Society of Chemistry A fluorite-structured HfO2/ZrO2/HfO2 superlattice based self-rectifying ferroelectric tunnel junction synapse Article 10.1039/d4mh00519h 1 Materials Horizons, v.11, no.21, pp.5251 - 5264 Materials Horizons 11 21 5251 5264 N scie scopus 001328587900001 2-s2.0-85205915149 Chemistry, Multidisciplinary Materials Science, Multidisciplinary Chemistry Materials Science Article HAFNIUM OXIDE THIN-FILMS LOW-POWER DEVICES HFO2 RRAM