Choi, Jonghyeon Park, Jungmin Noh, Seunghyeon Lee, Jaebyeong Lee, Seunghyun Choe, Daeseong Jung, Hyeonjung Jo, Junhyeon Oh, Inseon Han, Juwon Kwon, Soon-Yong Ahn, Chang Won Min, Byoung-Chul Jin, Hosub Kim, Choong H. Kim, Kyoung-Whan Yoo, Jung-Woo 2024-11-07T01:00:35Z 2024-11-07T01:00:35Z 2024-11-06 2024-10 https://pubs.kist.re.kr/handle/201004/150970 Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative is to encode the information in a non-volatile magnetic state and manipulate this spin state electronically, as in spintronics. However, current spintronic devices rely on the current-driven control of magnetization, which involves Joule heating and power dissipation. This limitation has motivated intense research into the voltage-driven manipulation of spin signals to achieve energy-efficient device operation. Here, we show non-volatile control of spin-charge conversion at room temperature in graphene-based heterostructures through Fermi level tuning. We use a polymeric ferroelectric film to induce non-volatile charging in graphene. To demonstrate the switching of spin-to-charge conversion we perform ferromagnetic resonance and inverse Edelstein effect experiments. The sign change of output voltage is derived by the change of carrier type, which can be achieved solely by a voltage pulse. Our results provide an alternative approach for the electric-field control of spin-charge conversion, which constitutes a building block for the next generation of spin-orbitronic memory and logic devices. Spin-to-charge conversion is the process through with a spin current is converted into charge current. It, along with its inverse effect, represents an essential building block for spintronics devices. Here, Choi et al. demonstrate non-volatile control of spin-to-charge conversion in a ferroelectric and graphene based heterostructure. English Nature Publishing Group Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature Article 10.1038/s41467-024-52835-z 1 Nature Communications, v.15, no.1 Nature Communications 15 1 Y scie scopus 001335963600022 2-s2.0-85206012591 Multidisciplinary Sciences Science & Technology - Other Topics Article EFFICIENT ELECTRONS