Yeo, Inah Ahn, Sun Hong Bae, Seo Kyung Kim, Junhoi Kim, Jong Su Song, Jin Dong 2024-11-07T02:00:46Z 2024-11-07T02:00:46Z 2024-11-06 2024-10 0957-4522 https://pubs.kist.re.kr/handle/201004/150994 We investigated exciton-phonon interactions in three types of GaAs/Al0.3Ga0.7As quantum dots (QDs grown by droplet epitaxy. Comparative optical studies were conducted on QDs of similar species, grown under identical conditions, and on various other QD types. Multioscillator models were employed to analyze the phonon coupling channels in various QD species, with a focus on the influence of capping time on high-energy phonon channels. The findings were found to be consistent with those of previous atomic-scale structural analyses. Engineering exciton-phonon interactions offers a viable approach for implementing QD-based devices in optoelectronics, thermoelectrics, and information-processing applications. English SPRINGER Comparative study of exciton-phonon interactions in GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy Article 10.1007/s10854-024-13653-7 1 Journal of Materials Science: Materials in Electronics, v.35, no.28 Journal of Materials Science: Materials in Electronics 35 28 N scie scopus 001338520100005 2-s2.0-85206239291 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Engineering Materials Science Physics Article TEMPERATURE-DEPENDENCE