Chu, Rafael Jumar Lung, Quang Nhat Dang Laryn, Tsimafei Choi, Won Jun Jung, Daehwan 2024-11-30T06:30:26Z 2024-11-30T06:30:26Z 2024-11-30 2025-01 1613-6810 https://pubs.kist.re.kr/handle/201004/151223 Integration of graphene and quantum dots (QD) is a promising route to improved material and device functionalities. Underlying the improved properties are alterations in carrier dynamics within the graphene/QD heterostructure. In this study, it is shown that graphene functions as a carrier redistribution and supply channel when integrated with InAs QDs. Photoluminescence (PL) spectroscopy provides evidence that graphene modifies the redistribution, escape, and recombination dynamics of carriers in the InAs QD ensemble, which ultimately leads to enhanced radiative recombinations at all temperatures and excitation densities probed. It is also shown that the PL enhancement from the graphene/InAs QD heterostructure is greatest with a thin GaAs cap and at higher temperatures where devices operate. This study advances the understanding of graphene/QD heterostructures and can aid the design of mixed-dimensional optoelectronic devices. English Wiley - V C H Verlag GmbbH & Co. Engineering Photocarrier Redistributions in Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructures for Radiative Recombination Enhancements Article 10.1002/smll.202406197 1 Small, v.21, no.1 Small 21 1 Y scie scopus 001357087900001 2-s2.0-85208938413 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article PHOTOLUMINESCENCE TEMPERATURE DEPENDENCE carrier dynamics graphene InAs mixed-dimensional photoluminescence quantum dot