Son, Ki-Hoon Oh, Sehoon Lee, Junho Yun, Sobin Shin, Yunseo Yan, Shaohua Jang, Chaun Lee, Hong-Sub Lei, Hechang Park, Se Young Ryu, Hyejin 2025-01-07T01:00:24Z 2025-01-07T01:00:24Z 2024-12-30 2024-12 https://pubs.kist.re.kr/handle/201004/151465 Room-temperature magnetism and its stability upon miniaturization are essential characteristics required for materials for spintronic devices and information storage. Among various candidates, Fe3GaTe2 stands out due to its high Curie temperature and strong perpendicular magnetic anisotropy (PMA), recently gaining large attention as one of the promising candidate materials for spintronics applications. In this study, we measured the thickness-dependent ferromagnetic properties of Fe3GaTe2 and (Fe1？？？xNix)3GaTe2 (with x？=？0.1) flakes. We observed that both pristine and Ni-doped Fe3GaTe2 exhibit persistent ferromagnetism, with only a minor decrease in TC as the thickness is reduced to a few tens of nanometers. This capacity to retain robust ferromagnetic properties at reduced dimensions is highly advantageous for thin-film applications, which is crucial for the scaling of spintronic devices. Understanding and controlling thickness-dependent magnetic properties is fundamental to harnessing the full potential of Fe3GaTe2 in van der Waals magnetic heterostructures and advanced spintronic technologies. English Springer | Korea Nano Technology Research Society Persistent ferromagnetic ground state in pristine and Ni-doped Fe3GaTe2 flakes Article 10.1186/s40580-024-00458-x 1 Nano Convergence, v.11, no.1, pp.1 - 9 Nano Convergence 11 1 1 9 Y scie scopus kci ART003253308 001376933200002 2-s2.0-85211776143 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article ABSENCE Room-temperature van der waals ferromagnet Fe3GaTe2 Ni doped Fe3GaTe2 Magnetism Thin film device application