Kim, Seong Been Lee, Je-Jun Choi, Dongwon Kim, Seung-Hwan Ahn, Jeong Ung Han, Ki Hyuk Park, Tae-Eon Lee, Oukjae Lee, Ki-Young Hong, Seokmin Min, Byoung-Chul Kim, Hyung-jun Hwang, Do Kyung Koo, Hyun Cheol 2025-01-20T01:00:19Z 2025-01-20T01:00:19Z 2025-01-17 2025-01 https://pubs.kist.re.kr/handle/201004/151584 A synaptic function is demonstrated using spin–charge conversion in a Rashba system. In an asymmetric quantum well channel, fast-moving charges induce a Rashba effective magnetic field, which separates spin-up and spin-down potentials. The ferromagnet detects these spin-dependent potentials, corresponding to the spin information on the channel. The multiple ferromagnetic electrodes, each with different switching fields, probe their respective spin potentials, and the output terminal reads the superposition of the detected potentials, thereby realizing multiple voltage states. These multiple states are systematically modulated and changed to any desired state directly, enabling both the potentiation and depression of synaptic behavior. In this memristive function device, both charge-to-spin and spin-to-charge conversions are demonstrated in a single device, consistent with the reciprocal relation. Additionally, neuromorphic pattern recognition is clearly demonstrated by controlling the Vmax/Vmin ratio and offset resistance. English AMER CHEMICAL SOC Spin-Charge Conversion-Based Artificial Synaptic Device for Neuromorphic Computing Article 10.1021/acsaelm.4c02048 1 ACS Applied Electronic Materials, v.7, no.1, pp.571 - 581 ACS Applied Electronic Materials 7 1 571 581 N scie scopus 001387061700001 2-s2.0-85213225955 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article DOMAIN-WALL MOTION HALL spin-chargeconversion Rashba spin-orbitcoupling multistate memory artificial synapses neuromorphic computing