Seok, Jisoo Seo, Jae Eun Lee, Dae Kyu Kwak, Joon Young Chang, Jiwon 2025-01-23T07:30:28Z 2025-01-23T07:30:28Z 2025-01-23 2025-01 1936-0851 https://pubs.kist.re.kr/handle/201004/151653 MoS2, one of the most researched two-dimensional semiconductor materials, has great potential as the channel material in dynamic random-access memory (DRAM) due to the low leakage current inherited from the atomically thin thickness, high band gap, and heavy effective mass. In this work, we fabricate one-transistor-one-capacitor (1T1C) DRAM using chemical vapor deposition (CVD)-grown monolayer (ML) MoS2 in large area and confirm the ultralow leakage current of approximately 10(-18) A/mu m, significantly lower than the previous report (10(-15) A/mu m) in two-transistor-zero-capacitor (2T0C) DRAM based on a few-layer MoS2 flake. Through rigorous analysis of leakage current considering thermionic emission, tunneling at the source/drain, Shockley-Read-Hall recombination, and trap-assisted tunneling (TAT) current, the TAT current is identified as the primary source of leakage current. These findings highlight the potential of CVD-grown ML MoS2 to extend the retention time in DRAM and provide a deep understanding of the leakage current sources in MoS2 1T1C DRAM for further optimization to minimize the leakage current. English American Chemical Society Attoampere Level Leakage Current in Chemical Vapor Deposition-Grown Monolayer MoS2 Dynamic Random-Access Memory in Trap-Assisted Tunneling Limit Article 10.1021/acsnano.4c13376 1 ACS Nano, v.19, no.2, pp.2458 - 2467 ACS Nano 19 2 2458 2467 N scie scopus 001394821300001 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article TRANSISTORS SOI MoS2 DRAM leakage current thermionic emission tunneling current Shockley-Read-Hallrecombination trap-assisted tunneling current