Moon, Donghoon Lee, Wonsik Lim, Chaesung Kim, Jinwoo Kim, Jiwoo Jung, Yeonjoon Choi, Hyun-Young Choi, Won Seok Kim, Hangyel Baek, Ji-Hwan Kim, Changheon Joo, Jaewoong Oh, Hyun-Geun Jang, Hajung Watanabe, Kenji Taniguchi, Takashi Bae, Sukang Son, Jang yup Ryu, Huije Kwon, Junyoung Cheong, Hyeonsik Han, Jeong Woo Jang, Hyejin Lee, Gwan-Hyoung 2025-02-28T09:00:12Z 2025-02-28T09:00:12Z 2025-02-27 2025-02 0028-0836 https://pubs.kist.re.kr/handle/201004/151804 Two-dimensional (2D) semiconductors, particularly transition metal dichalcogenides (TMDs), are promising for advanced electronics beyond silicon1,2,3. Traditionally, TMDs are epitaxially grown on crystalline substrates by chemical vapour deposition. However, this approach requires post-growth transfer to target substrates, which makes controlling thickness and scalability difficult. Here we introduce a method called hypotaxy (‘hypo’ meaning downward and ‘taxy’ meaning arrangement), which enables wafer-scale single-crystal TMD growth directly on various substrates, including amorphous and lattice-mismatched substrates, while preserving crystalline alignment with an overlying 2D template. By sulfurizing or selenizing a pre-deposited metal film under graphene, aligned TMD nuclei form, coalescing into a single-crystal film as graphene is removed. This method achieves precise MoS2 thickness control from monolayer to hundreds of layers on diverse substrates, producing 4-inch single-crystal MoS2 with high thermal conductivity (about 120？W？m？1？K？1) and mobility (around 87？cm2？V？1？s？1). Furthermore, nanopores created in graphene using oxygen plasma treatment allow MoS2 growth at a lower temperature of 400？°C, compatible with back-end-of-line processes. This hypotaxy approach extends to other TMDs, such as MoSe2, WS2 and WSe2, offering a solution to substrate limitations in conventional epitaxy and enabling wafer-scale TMDs for monolithic three-dimensional integration. English Nature Publishing Group Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides Article 10.1038/s41586-024-08492-9 1 Nature, v.638, no.8052, pp.957 - 964 Nature 638 8052 957 964 N scie scopus 001425307100001 Multidisciplinary Sciences Science & Technology - Other Topics Article VAPOR-PHASE GROWTH GRAIN-BOUNDARIES 2-DIMENSIONAL MATERIALS MOS2 GRAPHENE LAYERS