Kim, Heetae Park, Seohak Jeong, Johak Jeon, Jihoon Lee, Hoseok Sung, Chihun Na, Jeho Kim, Min Ju Kim, Seong Keun Choi, Sung-Yool Heo, Keun Cho, Sung Haeng Cho, Byung Jin 2025-03-20T14:30:09Z 2025-03-20T14:30:09Z 2025-03-19 2024-12 0741-3106 https://pubs.kist.re.kr/handle/201004/151921 In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 x 10(-16) A/mu m, even after the high-k dielectric crystallization process. English Institute of Electrical and Electronics Engineers Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors Article 10.1109/LED.2024.3485609 1 IEEE Electron Device Letters, v.45, no.12, pp.2431 - 2434 IEEE Electron Device Letters 45 12 2431 2434 N scie scopus 001396943500043 2-s2.0-85207953030 Engineering, Electrical & Electronic Engineering Article CRYSTALLIZATION TEMPERATURE Intense pulsed light 1T-1C DRAM oxide semiconductor high-k dielectric