Kim, Han Kim, Taeseok Kim, Min Seok Jeon, Jihoon Park, Gwang Min Kim, SungChul Won, Sung Ok Harada, Ryosuke Kim, Sangtae Kim, Seong Keun 2025-03-23T11:30:24Z 2025-03-23T11:30:24Z 2025-03-19 2025-03 1530-6984 https://pubs.kist.re.kr/handle/201004/152075 The high surface energy of metals often drives the formation of isolated ultrathin islands of metal nuclei during film fabrication, which remains a significant challenge in achieving continuous, smooth metallic films. This study introduces an inhibitor-modified atomic layer deposition (ALD) strategy for producing ultrathin continuous Ir and Pt films on dielectric substrates. Aniline, which was used as the inhibitor, was exclusively adsorbed onto the metallic surface. The selective passivation of metal nuclei with aniline suppresses the lateral growth of existing nuclei while promoting the formation of new nuclei, enabling the formation of continuous films with thicknesses below 1 and 2.3 nm for Ir and Pt, respectively. Compared with conventional ALD, this approach significantly improved the surface smoothness and reduced the resistivity. Furthermore, this approach is particularly effective for precursors with substantial nucleation delays. This strategy offers an effective solution for fabricating ultrathin and smooth metallic films for emerging electronic devices. English American Chemical Society Selective Surface Passivation for Ultrathin and Continuous Metallic Films via Atomic Layer Deposition Article 10.1021/acs.nanolett.5c00590 1 Nano Letters, v.25, no.10, pp.4101 - 4107 Nano Letters 25 10 4101 4107 N scie scopus 001436076300001 2-s2.0-86000160658 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article THIN-FILMS RUTHENIUM ultrathin metallic film atomic layer deposition inhibitor aniline