Nam, Hyun Woo Lee, Jae Hoon Ryoo, Seung Kyu Shin, Seong Jae Ye, Kun Hee Kim, Kyung Do Byun, Seung yong Lee, In Soo Lee, Suk Hyun Song, Jae Hee Choi, Jung hae Hwang, Cheol Seong 2025-04-25T06:01:06Z 2025-04-25T06:01:06Z 2025-04-25 2025-05 2050-7526 https://pubs.kist.re.kr/handle/201004/152302 This work examines the impact of atomic-layer-deposited 1-nm-thick HfNx interfacial layer (IL) deposition and NH3 annealing conditions on the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) thin film capacitors and ferroelectric thin-film transistors (FeTFTs) with an amorphous InGaZnO channel. Adjusting these processing parameters enabled significant improvements in key device performance metrics, including the memory window (MW) and data retention stability of the FeTFTs. The optimized NH3 annealing process at 450 degrees C facilitated nitrogen diffusion into the HZO matrix, decreasing charge trap density and oxygen vacancies. This annealing condition decreased the remanent polarization and slightly increased the coercive field, yielding a maximum MW of similar to 1.9 V. A MW of similar to 1.0 V could be retained for up to 10 years. In contrast, the device without the optimized IL showed a MW of only similar to 0.6 V with a retention time shorter than similar to 1 year. These findings demonstrate the effectiveness of HfNx IL deposition and NH3 annealing for enhancing the performance and reliability of amorphous InGaZnO channel FeTFTs, making them promising candidates for nonvolatile memory applications. It also provides a viable method to independently control the remanent polarization and coercive field, which are conventionally deemed material-specific properties. English Royal Society of Chemistry Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfNx interfacial layer Article 10.1039/d5tc00453e 1 Journal of Materials Chemistry C, v.13, no.19, pp.9705 - 9716 Journal of Materials Chemistry C 13 19 9705 9716 Y scie scopus 001465904800001 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article TOTAL-ENERGY CALCULATIONS