Ahn, Jeong Ung Lee, Eunsu Kim, Seongbeom Han, Ki Hyuk Kim, Seong Been Lee, OukJae Yi, Gyu-Chul Koo, Hyun Cheol 2025-04-25T06:31:26Z 2025-04-25T06:31:26Z 2025-04-25 2025-05 1738-8090 https://pubs.kist.re.kr/handle/201004/152316 Topological insulators (TIs) represent a unique state of matter that has attracted significant interest in condensed matter physics due to their surface conduction states with high spin polarization. Despite extensive studies on the properties of TIs, there has been limited exploration of the Rashba parameter and large-scale film growth. In this work, we investigate the Rashba effect in molecular-beam-epitaxy(MBE)-grown Bi2Te3 channels by measuring anisotropic magnetoresistance (AMR). The extracted Rashba parameter is as large as 16.3 eV<middle dot>& Aring;, significantly exceeding values reported in previous studies. This strong Rashba field is attributed to the minimization of imperfections and crystal defects during film fabrication. Furthermore, nonreciprocal charge transport induced by the Rashba-like effective field is clearly observed up to room temperature through harmonic resistance measurements. The temperature dependence of the nonreciprocal coefficient exhibits a non-monotonic behavior, which is believed to arise from the temperature dependence of the Fermi level position. English 대한금속·재료학회 Observation of Rashba Effect and Nonreciprocal Transport in Bi2Te3 Article 10.1007/s13391-025-00558-8 1 Electronic Materials Letters, v.21, no.3, pp.420 - 428 Electronic Materials Letters 21 3 420 428 N scie scopus kci 001458021900001 2-s2.0-105001838567 Materials Science, Multidisciplinary Materials Science Article 3-DIMENSIONAL TOPOLOGICAL INSULATOR ANISOTROPIC MAGNETORESISTANCE SURFACE-STATES BI2SE3 Topological insulator Bi2Te3 MBE Rashba effect Nonreciprocal charge transport