Lee, Je-Jun Han, Seong-Jun Hwang, Do Kyung 2025-04-25T08:01:33Z 2025-04-25T08:01:33Z 2025-04-25 2025-05 2330-4022 https://pubs.kist.re.kr/handle/201004/152346 As recent optoelectronic devices evolve beyond passive light sensors, their photoinduced memory effects are offering new possibilities for sensor-based artificial intelligence through the integration of sensing and computation. These applications have been developed utilizing a broad range of photoresponse times; however, a comprehensive, unified perspective for categorizing these mechanisms based on response time remains elusive. By encompassing the fast-decaying responses in photodetectors and the persistent memory states in optoelectronic synapses, this perspective provides a systematic framework for understanding the broad spectrum of photoresponse time scales associated with photoinduced memory effects in optoelectronic devices. We first introduce the mechanisms of photocurrent generation through photoconductive and photogating effects, and then we provide an overview of photoresponse times, both with and without consideration of recombination time, covering volatile and nonvolatile processes. Finally, we highlight the role of photoinduced memory effects in various emerging intelligent sensor technologies. English American Chemical Society Understanding Photoinduced Memory Effects in Optoelectronic Devices across Photoresponse Time Scales for Sensor-Based Artificial Intelligence Article 10.1021/acsphotonics.5c00151 1 ACS Photonics, v.12, no.5, pp.2262 - 2278 ACS Photonics 12 5 2262 2278 N scie scopus 001462736200001 2-s2.0-105002672909 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Optics Physics, Applied Physics, Condensed Matter Science & Technology - Other Topics Materials Science Optics Physics Review PHOTODIODE sensor-based computing optoelectronic devices optoelectronic synapses photoresponse time memory devices photoinducedmemory in-sensor computing