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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Kangsan</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Jihyun</dcvalue>
<dcvalue element="contributor" qualifier="author">Jung,&#x20;Myeongjin</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;In&#x20;Soo</dcvalue>
<dcvalue element="contributor" qualifier="author">Yu,&#x20;Byoung-Soo</dcvalue>
<dcvalue element="contributor" qualifier="author">Won,&#x20;Sang&#x20;Min</dcvalue>
<dcvalue element="contributor" qualifier="author">Son,&#x20;Donghee</dcvalue>
<dcvalue element="contributor" qualifier="author">Li,&#x20;Heng</dcvalue>
<dcvalue element="contributor" qualifier="author">Sofer,&#x20;Zdenek</dcvalue>
<dcvalue element="contributor" qualifier="author">Hwang,&#x20;Do&#x20;Kyung</dcvalue>
<dcvalue element="contributor" qualifier="author">Jariwala,&#x20;Deep</dcvalue>
<dcvalue element="contributor" qualifier="author">Kang,&#x20;Joohoon</dcvalue>
<dcvalue element="date" qualifier="accessioned">2025-05-22T05:31:00Z</dcvalue>
<dcvalue element="date" qualifier="available">2025-05-22T05:31:00Z</dcvalue>
<dcvalue element="date" qualifier="created">2025-05-21</dcvalue>
<dcvalue element="date" qualifier="issued">2025-06</dcvalue>
<dcvalue element="identifier" qualifier="issn">2520-1131</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;152460</dcvalue>
<dcvalue element="description" qualifier="abstract">Reconfigurable&#x20;devices&#x20;that&#x20;can&#x20;switch&#x20;functionalities&#x20;could&#x20;be&#x20;used&#x20;to&#x20;overcome&#x20;the&#x20;limitations&#x20;of&#x20;miniaturized&#x20;metal-oxide-semiconductor&#x20;field-effect&#x20;transistors.&#x20;Conventional&#x20;approaches&#x20;typically&#x20;involve&#x20;the&#x20;partial&#x20;electrostatic&#x20;modulation&#x20;of&#x20;two-dimensional&#x20;semiconductors&#x20;and&#x20;use&#x20;partial&#x20;floating&#x20;gates&#x20;or&#x20;dual-gate&#x20;structures.&#x20;Reconfigurable&#x20;devices&#x20;based&#x20;on&#x20;vertical&#x20;van&#x20;der&#x20;Waals&#x20;heterostructures&#x20;have&#x20;much&#x20;simpler&#x20;device&#x20;structures,&#x20;but&#x20;lack&#x20;a&#x20;scalable&#x20;assembly&#x20;method.&#x20;Here,&#x20;we&#x20;report&#x20;a&#x20;scalable&#x20;reconfigurable&#x20;device&#x20;based&#x20;on&#x20;solution-processed&#x20;van&#x20;der&#x20;Waals&#x20;heterostructures.&#x20;We&#x20;vertically&#x20;assemble&#x20;thin&#x20;films&#x20;of&#x20;sub-stoichiometric&#x20;zirconium&#x20;oxide&#x20;(ZrO2-x)&#x20;as&#x20;a&#x20;dielectric&#x20;and&#x20;molybdenum&#x20;disulfide&#x20;(MoS2)&#x20;as&#x20;a&#x20;semiconductor&#x20;layer.&#x20;The&#x20;ZrO2-x&#x2F;MoS2&#x20;heterostructure&#x20;provides&#x20;simultaneous&#x20;global&#x20;and&#x20;local&#x20;gating&#x20;within&#x20;a&#x20;single-gate&#x20;transistor&#x20;configuration,&#x20;modulating&#x20;the&#x20;spatial&#x20;electric&#x20;field&#x20;across&#x20;the&#x20;device&#x20;in&#x20;a&#x20;reconfigurable&#x20;manner.&#x20;Under&#x20;global&#x20;gating&#x20;conditions,&#x20;the&#x20;devices&#x20;function&#x20;as&#x20;uniform&#x20;field-effect&#x20;transistors&#x20;with&#x20;an&#x20;average&#x20;field-effect&#x20;mobility&#x20;of&#x20;10&#x20;cm2&#x20;V-1&#x20;s-1&#x20;and&#x20;current&#x20;on&#x2F;off&#x20;ratio&#x20;of&#x20;up&#x20;to&#x20;106.&#x20;Under&#x20;local&#x20;gating&#x20;conditions,&#x20;the&#x20;devices&#x20;function&#x20;as&#x20;diodes,&#x20;exhibiting&#x20;a&#x20;current&#x20;rectification&#x20;ratio&#x20;of&#x20;around&#x20;7&#x20;x&#x20;104.&#x20;By&#x20;harnessing&#x20;the&#x20;reconfigurable&#x20;characteristics,&#x20;we&#x20;achieve&#x20;adjustable&#x20;temporal&#x20;photoresponse&#x20;dynamics&#x20;with&#x20;a&#x20;photoresponsivity&#x20;of&#x20;around&#x20;105&#x20;A&#x20;W-1,&#x20;high&#x20;spatial&#x20;uniformity&#x20;and&#x20;multi-spectral&#x20;photodetection.&#x20;We&#x20;also&#x20;use&#x20;the&#x20;approach&#x20;to&#x20;create&#x20;a&#x20;large-area&#x20;reconfigurable&#x20;optoelectronics&#x20;array.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">NATURE&#x20;PUBLISHING&#x20;GROUP</dcvalue>
<dcvalue element="title" qualifier="none">Sub-stoichiometric&#x20;zirconium&#x20;oxide&#x20;as&#x20;a&#x20;solution-processed&#x20;dielectric&#x20;for&#x20;reconfigurable&#x20;electronics</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1038&#x2F;s41928-025-01379-1</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">Nature&#x20;Electronics,&#x20;v.8,&#x20;no.6,&#x20;pp.461&#x20;-&#x20;473</dcvalue>
<dcvalue element="citation" qualifier="title">Nature&#x20;Electronics</dcvalue>
<dcvalue element="citation" qualifier="volume">8</dcvalue>
<dcvalue element="citation" qualifier="number">6</dcvalue>
<dcvalue element="citation" qualifier="startPage">461</dcvalue>
<dcvalue element="citation" qualifier="endPage">473</dcvalue>
<dcvalue element="description" qualifier="isOpenAccess">N</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">001482002800001</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-105004359772</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">TRANSITION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">PHOTODETECTOR</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">FILM</dcvalue>
</dublin_core>
