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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Kuk,&#x20;Song-Hyeon</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Bong&#x20;Ho</dcvalue>
<dcvalue element="contributor" qualifier="author">Park,&#x20;Youngkeun</dcvalue>
<dcvalue element="contributor" qualifier="author">Ko,&#x20;Kyul</dcvalue>
<dcvalue element="contributor" qualifier="author">Hwang,&#x20;Hyeon-Seong</dcvalue>
<dcvalue element="contributor" qualifier="author">Cho,&#x20;Byung&#x20;Jin</dcvalue>
<dcvalue element="contributor" qualifier="author">Han,&#x20;Jae-Hoon</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Sang-Hyeon</dcvalue>
<dcvalue element="date" qualifier="accessioned">2025-06-18T03:00:11Z</dcvalue>
<dcvalue element="date" qualifier="available">2025-06-18T03:00:11Z</dcvalue>
<dcvalue element="date" qualifier="created">2025-06-13</dcvalue>
<dcvalue element="date" qualifier="issued">2025-07</dcvalue>
<dcvalue element="identifier" qualifier="issn">0018-9383</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;152625</dcvalue>
<dcvalue element="description" qualifier="abstract">3-D&#x20;NAND&#x20;flash&#x20;cells&#x20;with&#x20;ferroelectric&#x20;field-effect&#x20;transistors&#x20;(FEFETs)&#x20;have&#x20;gained&#x20;significant&#x20;attention&#x20;due&#x20;to&#x20;emerging&#x20;challenges&#x20;in&#x20;3-D&#x20;NAND&#x20;technology.&#x20;Although&#x20;metal-insulator-ferroelectric-insulator-semiconductor&#x20;(MIFIS)&#x20;structures&#x20;provide&#x20;large&#x20;memory&#x20;windows&#x20;(MWs),&#x20;FEFET&#x20;is&#x20;still&#x20;under&#x20;extensive&#x20;research&#x20;and&#x20;faces&#x20;critical&#x20;issues&#x20;such&#x20;as&#x20;data&#x20;retention,&#x20;write&#x20;endurance,&#x20;disturbance,&#x20;variability,&#x20;scalability,&#x20;gate&#x20;stack&#x20;thickness,&#x20;write&#x20;voltage,&#x20;and&#x20;thermal&#x20;stability&#x20;of&#x20;FE-HfO2.&#x20;Here,&#x20;we&#x20;propose&#x20;a&#x20;novel&#x20;gate&#x20;stack,&#x20;metal-insulator-high&#x20;k&#x20;insulator-ferroelectric-insulator-semiconductor&#x20;(MIKFIS)&#x20;to&#x20;address&#x20;these&#x20;challenges.&#x20;The&#x20;MIKFIS&#x20;FEFET&#x20;achieves&#x20;a&#x20;large&#x20;MW&#x20;of&#x20;12.2&#x20;V&#x20;and&#x20;demonstrates&#x20;highly&#x20;enhanced&#x20;quad-level-cell&#x20;(QLC)&#x20;data&#x20;retention&#x20;at&#x20;both&#x20;24&#x20;C-degrees&#x20;and&#x20;85&#x20;C-degrees.&#x20;Moreover,&#x20;MIKFIS&#x20;offers&#x20;additional&#x20;benefits,&#x20;including&#x20;reduced&#x20;monoclinic-(m-)&#x20;phase&#x20;formation,&#x20;reduced&#x20;gate&#x20;stack&#x20;thickness,&#x20;decreased&#x20;equivalent&#x20;oxide&#x20;thickness&#x20;(EOT),&#x20;and&#x20;enhanced&#x20;FE&#x20;switching.&#x20;The&#x20;origin&#x20;of&#x20;the&#x20;superior&#x20;retention&#x20;of&#x20;MIKFIS&#x20;is&#x20;investigated&#x20;using&#x20;a&#x20;revised&#x20;measurement&#x20;technique&#x20;developed&#x20;to&#x20;accurately&#x20;extract&#x20;polarization.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">Institute&#x20;of&#x20;Electrical&#x20;and&#x20;Electronics&#x20;Engineers</dcvalue>
<dcvalue element="title" qualifier="none">Superior&#x20;QLC&#x20;Retention&#x20;Enhancement&#x20;of&#x20;a&#x20;Large&#x20;Memory&#x20;Window&#x20;FEFET&#x20;Through&#x20;Gate&#x20;Stack&#x20;Engineering</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1109&#x2F;TED.2025.3568755</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">IEEE&#x20;Transactions&#x20;on&#x20;Electron&#x20;Devices,&#x20;v.72,&#x20;no.7,&#x20;pp.3896&#x20;-&#x20;3902</dcvalue>
<dcvalue element="citation" qualifier="title">IEEE&#x20;Transactions&#x20;on&#x20;Electron&#x20;Devices</dcvalue>
<dcvalue element="citation" qualifier="volume">72</dcvalue>
<dcvalue element="citation" qualifier="number">7</dcvalue>
<dcvalue element="citation" qualifier="startPage">3896</dcvalue>
<dcvalue element="citation" qualifier="endPage">3902</dcvalue>
<dcvalue element="description" qualifier="isOpenAccess">N</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">001499465500001</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-105006894642</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">STRATEGIES</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Thermal&#x20;stability</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Fabrication</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Flash&#x20;memories</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Capacitance</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Ferroelectric&#x20;field-effect&#x20;transistor&#x20;(FEFET)</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">ferroelectric&#x20;HfO2</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">gate&#x20;stack&#x20;design</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">NAND&#x20;flash</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Logic&#x20;gates</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Hafnium&#x20;compounds</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">FeFETs</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Silicon&#x20;compounds</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Iron</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Three-dimensional&#x20;displays</dcvalue>
</dublin_core>
