Kim, Danbi Han, Hyemi Choi, Changsoon Cho, Jeong Ho Han, Jae-Hoon Lim, Jung Ah 2025-06-24T02:00:16Z 2025-06-24T02:00:16Z 2025-06-23 2025-07 2050-7526 https://pubs.kist.re.kr/handle/201004/152673 Shortwave infrared (SWIR) photodetectors based on organic semiconductors hold promising potential for various applications. However, they face significant challenges, including poor air stability and low photoresponse. Here, a dual-optimization strategy is demonstrated to enhance SWIR organic phototransistor performance through the synergistic integration of material composition and device architecture engineering. A binary blend system combines a SWIR-absorbing low-bandgap polymer with another donor-acceptor type conjugated polymer possessing air-stability and high charge carrier mobility, forming a highly ordered co-crystalline structure with edge-on orientation that effectively improves both environmental stability and SWIR detection performance. Additionally, an embedded metal reflector gate architecture incorporating a high-k dielectric is designed to simultaneously enhance light absorption and enable low-voltage operation. The optimized phototransistors exhibit significantly improved photoresponse at 1310 nm with reduced operation voltage, achieving a photoresponsivity of 11.7 A W-1 and detectivity of 1.78 x 1011 Jones at -20 V gate bias. This work demonstrates that the integration of nanoscale morphology control and optical device engineering offers an effective approach toward high-performance SWIR organic photodetectors. English Royal Society of Chemistry Shortwave infrared organic phototransistors with improved performance via conjugated polymer blends and a metal reflector gate architecture Article 10.1039/d5tc01490e 1 Journal of Materials Chemistry C, v.13, no.26, pp.13393 - 13403 Journal of Materials Chemistry C 13 26 13393 13403 Y scie scopus 001500707100001 2-s2.0-105007477485 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article TRANSISTORS PHOTODETECTORS