Lim, Hyeongrak Kim, Seong Kwang Lee, Seung Woo Park, Youngkeun Jeong, Jaejoong Jeong, Hojin Lim, Jinha Geum, Dae-Myeong Han, Jae Hoon Kim, Younghyun Jeong, Jaeyong Cho, Byung Jin Kim, Sanghyeon 2025-06-27T07:30:12Z 2025-06-27T07:30:12Z 2025-06-23 2025-07 0018-9383 https://pubs.kist.re.kr/handle/201004/152698 In this work, we first demonstrated heterogeneous 3-D (H3D) sequential complementary field-effect transistors (seqCFETs) highlighting biaxially compressively strained Ge (sGe) (100) channel, which potentially solves a critical bottleneck in CFET development: high mobility top strained p-channel limited by the difficulty of SiGe stressor growth. Leveraging high-quality heteroepitaxial growth and direct wafer bonding (DWB), we achieved similar to 0.6% biaxially compressively sGe on a 6-in Si wafer by growing Ge virtual substrate, Si0.5Ge0.5 stressor/etch stopper, and sGe channel layer. Finally, we first demonstrated the H3D seqCFET with biaxially compressively sGe (100) p-channel MOSFETs, featuring good voltage transfer curve (VTC) characteristics with high voltage gain (V-gain) of 51 V/V at supply voltage (V-DD) = 1.25 V. We believe that the sGe channel realized by the method shown in this work will be a very promising technology to realize high-performance vertically 3-D stacked CFET in the future. English Institute of Electrical and Electronics Engineers Heterogeneous 3-D Sequential CFET With Strain-Engineered Ge (100) Top-Channel pMOSFET on Bulk Si (100) nMOSFET Article 10.1109/TED.2025.3574116 1 IEEE Transactions on Electron Devices, v.72, no.7, pp.3422 - 3428 IEEE Transactions on Electron Devices 72 7 3422 3428 N scie scopus 001504164200001 2-s2.0-105007515340 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article TRANSPORT heterogeneous 3-D sequential CFETs (H3D seqCFETs) MOSFETs strained Ge (sGe) wafer bonding Ge-on-insulator (Ge-OI) monolithic 3-D (M3D) integration