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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Han,&#x20;Kwanghee</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Heeyeon</dcvalue>
<dcvalue element="contributor" qualifier="author">Kwon,&#x20;Minseong</dcvalue>
<dcvalue element="contributor" qualifier="author">Menon,&#x20;Vinod</dcvalue>
<dcvalue element="contributor" qualifier="author">Jang,&#x20;Chaun</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Young&#x20;Duck</dcvalue>
<dcvalue element="date" qualifier="accessioned">2025-07-30T05:00:06Z</dcvalue>
<dcvalue element="date" qualifier="available">2025-07-30T05:00:06Z</dcvalue>
<dcvalue element="date" qualifier="created">2025-07-28</dcvalue>
<dcvalue element="date" qualifier="issued">2025-08</dcvalue>
<dcvalue element="identifier" qualifier="issn">2040-3364</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;152883</dcvalue>
<dcvalue element="description" qualifier="abstract">Two-dimensional&#x20;(2D)&#x20;van&#x20;der&#x20;Waals&#x20;semiconductors&#x20;show&#x20;promise&#x20;for&#x20;atomically&#x20;thin,&#x20;flexible,&#x20;and&#x20;transparent&#x20;optoelectronic&#x20;devices&#x20;in&#x20;future&#x20;technologies.&#x20;However,&#x20;developing&#x20;high-performance&#x20;field-effect&#x20;transistors&#x20;(FETs)&#x20;based&#x20;on&#x20;2D&#x20;materials&#x20;is&#x20;impeded&#x20;by&#x20;two&#x20;key&#x20;challenges,&#x20;namely,&#x20;the&#x20;high&#x20;contact&#x20;resistance&#x20;at&#x20;the&#x20;2D&#x20;semiconductor？metal&#x20;interface&#x20;and&#x20;limited&#x20;effective&#x20;doping&#x20;strategies.&#x20;Here,&#x20;we&#x20;present&#x20;a&#x20;novel&#x20;approach&#x20;to&#x20;overcome&#x20;these&#x20;challenges&#x20;using&#x20;self-propagating&#x20;liquid&#x20;Field&amp;apos;s&#x20;metal,&#x20;a&#x20;eutectic&#x20;alloy&#x20;with&#x20;a&#x20;low&#x20;melting&#x20;point&#x20;of&#x20;approximately&#x20;62&#x20;°C.&#x20;By&#x20;modifying&#x20;pre-patterned&#x20;electrodes&#x20;on&#x20;WSe2&#x20;FETs&#x20;through&#x20;the&#x20;deposition&#x20;of&#x20;Field&amp;apos;s&#x20;metal&#x20;onto&#x20;contact&#x20;pad&#x20;edges&#x20;followed&#x20;by&#x20;vacuum&#x20;annealing,&#x20;we&#x20;create&#x20;new&#x20;semimetal&#x20;electrodes&#x20;that&#x20;seamlessly&#x20;incorporate&#x20;the&#x20;liquid&#x20;metal&#x20;into&#x20;2D&#x20;semiconductors.&#x20;This&#x20;integration&#x20;preserves&#x20;the&#x20;original&#x20;electrode&#x20;architecture&#x20;while&#x20;transforming&#x20;to&#x20;semimetal&#x20;compositions&#x20;of&#x20;Field&amp;apos;s&#x20;metal,&#x20;such&#x20;as&#x20;Bi,&#x20;In,&#x20;and&#x20;Sn,&#x20;modifies&#x20;the&#x20;work&#x20;functions&#x20;to&#x20;2D&#x20;semiconductors,&#x20;resulting&#x20;in&#x20;reduced&#x20;contact&#x20;resistance&#x20;without&#x20;inducing&#x20;Fermi-level&#x20;pinning,&#x20;and&#x20;improves&#x20;charge&#x20;carrier&#x20;mobilities.&#x20;Our&#x20;method&#x20;enhances&#x20;the&#x20;electrical&#x20;performance&#x20;of&#x20;2D&#x20;devices&#x20;and&#x20;opens&#x20;new&#x20;avenues&#x20;for&#x20;designing&#x20;high-resolution&#x20;liquid&#x20;metal&#x20;circuits&#x20;suitable&#x20;for&#x20;stretchable,&#x20;flexible,&#x20;and&#x20;wearable&#x20;2D&#x20;semiconductor&#x20;applications.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">Royal&#x20;Society&#x20;of&#x20;Chemistry</dcvalue>
<dcvalue element="title" qualifier="none">Correction:&#x20;Self-patterning&#x20;of&#x20;liquid&#x20;Field&amp;apos;s&#x20;metal&#x20;for&#x20;enhanced&#x20;performance&#x20;of&#x20;two-dimensional&#x20;semiconductors</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1039&#x2F;d5nr90137e</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">Nanoscale,&#x20;v.17,&#x20;no.29,&#x20;pp.17397&#x20;-&#x20;17397</dcvalue>
<dcvalue element="citation" qualifier="title">Nanoscale</dcvalue>
<dcvalue element="citation" qualifier="volume">17</dcvalue>
<dcvalue element="citation" qualifier="number">29</dcvalue>
<dcvalue element="citation" qualifier="startPage">17397</dcvalue>
<dcvalue element="citation" qualifier="endPage">17397</dcvalue>
<dcvalue element="description" qualifier="isOpenAccess">Y</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">001526936300001</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-105010643708</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Chemistry,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Nanoscience&#x20;&amp;&#x20;Nanotechnology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Chemistry</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Correction;&#x20;Early&#x20;Access</dcvalue>
</dublin_core>
