Laryn, Tsimafei Chu, Rafael Jumar Kim, Yeonhwa Ju, Eunkyo Ahn, Chunghyun Yu, Hyun-Yong Madarang, May Jung, Hojoong Choi, Won Jun Jung, Daehwan 2025-08-20T03:15:50Z 2025-08-20T03:15:50Z 2025-08-20 2025-07 2662-1991 https://pubs.kist.re.kr/handle/201004/152966 Surface-emitting optoelectronic devices such as vertical cavity surface emitting lasers are important for various applications. However, the devices are typically grown on expensive and small-size III-V substrates. Si substrates can offer much improved scalability, lower cost and higher thermal properties but present significant challenges such as the formation of crystalline defects from the heteroepitaxial growth of III-V semiconductors on Si. Here, we propose multifunctional metamorphic In0.1Ga0.9As/AlAs distributed Bragg reflectors (DBRs) on Si which serve as a bottom mirror with a high reflectivity of 99.8% while simultaneously reducing the crystalline defect density by a factor of three, compared to GaAs/AlAs DBR on Si. The proposed DBR structure also exhibits a crack-free and exceptionally smooth surface morphology with root-mean-square roughness of 1.2 nm, which is five times smoother than the conventional GaAs/AlAs structure on Si. Furthermore, as proof of concept, InAs quantum dot surface-emitting diodes are fabricated on the metamorphic III-V DBR/Si templates and their performances are analyzed in comparison to those grown on native GaAs wafers. A narrow electroluminescence linewidth of 11.5 meV is observed, confirming that the multifunctional metamorphic DBR is promising for a scalable and more techno-economic surface-emitting III-V optoelectronics grown on Si substrates. English SpringerOpen Multifunctional metamorphic III-V distributed bragg reflectors grown on si substrate for resonant cavity surface emitting devices Article 10.1186/s43074-025-00180-9 1 PhotoniX, v.6, no.1 PhotoniX 6 1 Y scie scopus 001538088600001 2-s2.0-105011869881 Optics Optics Article QUANTUM-DOT LASERS ROOM-TEMPERATURE GAAS PERFORMANCE DISLOCATIONS RELAXATION MISFIT STRAIN IMPACT LAYERS