Park, Sein Kim, Yongmin SONG, JIN DONG 2025-08-20T06:12:18Z 2025-08-20T06:12:18Z 2025-08-20 2025-10 0374-4884 https://pubs.kist.re.kr/handle/201004/152985 We investigate the photoluminescence (PL) characteristics of GaAs quantum dots (QDs) fabricated via droplet epitaxy as a function of temperature. With increasing temperature, the PL peak energy and integrated PL intensity decrease, while the full width at half maximum (FWHM) broadens. These variations are attributed to enhanced phonon interactions and carrier dynamics. Specifically, the reduction in transition energy and the FWHM broadening are attributed to electron-phonon interactions, whereas the decline in integrated PL intensity is associated with carrier transfer and exciton dissociation. English 한국물리학회 Electron-phonon interactions in GaAs droplet quantum dots characterized by temperature-dependent optical transitions Article 10.1007/s40042-025-01443-1 1 Journal of the Korean Physical Society, v.87, no.8, pp.1002 - 1006 Journal of the Korean Physical Society 87 8 1002 1006 N scie scopus kci 001536033700001 2-s2.0-105011938222 Physics, Multidisciplinary Physics Article EXCITONS WELLS PHOTOLUMINESCENCE LINEWIDTHS BAND-GAP Droplet quantum dot Photoluminescence Electron-phonon coupling Activation energy Band gap reduction