Varshney, Mayora Sharma, Aditya Parkash, Jai Lee, B. H. Chae, K. H. Won, S. O. 2025-08-20T06:32:16Z 2025-08-20T06:32:16Z 2025-08-20 2025-10 0009-2614 https://pubs.kist.re.kr/handle/201004/152988 Connections among the metal-oxygen octahedra distortions, electronic structure perturbation and origin of photoluminescence (PL) in aliovalent element (Zn2+) doped SnO2 thin films have been investigated using the near edge X-ray absorption fine structure (NEXAFS) spectroscopy, PL spectroscopy, UV-visible absorption spectroscopy, and X-ray diffraction (XRD). The crystallite increases and the bandgap energy decreases with increasing the annealing temperature. Sn M5,4 edge and Zn L3,2-edge NEXAFS spectra have confirmed the Sn4+ and Zn2+ ions in thin films. O K-edge NEXAFS spectra convey Sn-O6 distortion. Mechanistically, different oxygen vacancies (VO0, V+1 English Elsevier BV Effect of annealing temperature on electronic structure and luminescence properties of Zn:SnO2 thin films Article 10.1016/j.cplett.2025.142285 1 Chemical Physics Letters, v.877 Chemical Physics Letters 877 N scie scopus 001538398700001 2-s2.0-105010339040 Chemistry, Physical Physics, Atomic, Molecular & Chemical Chemistry Physics Article RAY PHOTOELECTRON-SPECTROSCOPY EVAPORATION ZNO NI SNO2 Photoluminescence spectroscopy X-ray absorption spectroscopy