Rhee, Dongjoon Song, Okin Park, Ji Yun Kwon, Yonghyun Albert Kim, Jae Hyung Kim, In Soo Sofer, Zdenek Cho, Jeong Ho Jariwala, Deep Park, Hyesung Kang, Joohoon 2025-09-17T02:33:16Z 2025-09-17T02:33:16Z 2025-09-16 2026-02 1616-301X https://pubs.kist.re.kr/handle/201004/153178 2D semiconductors have emerged as promising channel materials for complementary logic circuits in future electronics. Efforts to scale them beyond a few-device-level demonstrations toward practical circuit fabrication have primarily relied on chemical vapor deposition or solution-based exfoliation of bulk crystals into 2D nanosheets. While the latter offers a facile and cost-effective approach for producing 2D semiconductors, scalable fabrication and integration of complementary doping schemes to produce complex integrated circuits has been challenging. Here, a scalable, parallel fabrication strategy is developed to realize 2D semiconductor-based complementary logic gates through electric-field-driven deterministic assembly of nanosheet dispersions. Arrays of n-type and p-type semiconducting channels are formed by selectively assembling electrochemically exfoliated MoS2 and WSe2 nanosheets between source and drain electrodes using alternating current dielectrophoresis (AC-DEP), followed by solution-based chemical treatment to passivate chalcogen vacancies. Under optimal AC-DEP processing conditions, the MoS2 and WSe2 field-effect transistors (FETs) exhibit average field-effect mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and average on/off current ratios exceeding 104. The capability of the approach to precisely position n-channel and p-channel FETs enables scalable and parallel fabrication of diverse complementary logic gates—such as NOT, NAND, and NOR—and static random access memory. English John Wiley & Sons Ltd. Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors Article 10.1002/adfm.202516285 1 Advanced Functional Materials, v.36, no.11 Advanced Functional Materials 36 11 Y scie Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Early Access THIN-FILM TRANSISTORS EXFOLIATION METAL CONDUCTIVITY MANIPULATION ORIENTATION PERFORMANCE NANOSHEETS PARTICLES SENSOR dielectrophoresis field-effect transistors solution processing 2D semiconductors complementary logic gates