Choi, Gyung-Min Lee, Oukjae Chung, Sunjae Kim, Woojin Lee, Taeyoung Park, Byong-Guk Yang, Seungmo 2025-09-30T06:02:57Z 2025-09-30T06:02:57Z 2025-09-30 2025-09 2374-6149 https://pubs.kist.re.kr/handle/201004/153263 Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM). Owing to its superior properties of size, speed, and endurance, MRAM is promising for applications in internet-of-things, automotive microcontrollers, and data centers. Here, we review key spintronic technologies of magnetoresistance and spin-transfer torque, which are the operating mechanism for MRAM, and properties and status of MRAM commercialization. We also review recent achievements and future challenges in emerging topics of spin-orbit torque, voltage gating, orbitronics, and antiferromagnetic spintronics, and new applications of spin-torque oscillators, probabilistic computing, and skyrmion-based applications. English TAYLOR & FRANCIS LTD Spintronics and magnetic memory devices Article 10.1080/23746149.2025.2557918 1 Advances in Physics: X, v.10, no.1 Advances in Physics: X 10 1 Y scie scopus 001577359700001 Physics, Multidisciplinary Physics Review SPIN-TRANSFER-TORQUE ROOM-TEMPERATURE MAGNETORESISTANCE TUNNEL-JUNCTION GIANT MAGNETORESISTANCE ORBIT TORQUES PERPENDICULAR MAGNETIZATION VOLTAGE-DEPENDENCE SKYRMION LATTICE ELECTRIC-CURRENT PHASE-LOCKING Spintronics magnetic memory MRAM