Jeong, Seonghoon Lee, Yohan Choi, Yunju Kim, Hyunsoo 2025-10-01T11:03:39Z 2025-10-01T11:03:39Z 2025-09-30 2025-12 0374-4884 https://pubs.kist.re.kr/handle/201004/153309 We report on the hybrid dual-emission characteristics of GaN-based ultraviolet light-emitting diodes (UV-LEDs) integrated with CH3NH3PbBr3 (MAPbBr(3)) perovskite photoluminescent coatings. The resulting device exhibits two spectrally distinct emission bands: a near-UV peak arising from the InGaN/GaN multiple quantum wells and a green emission generated via radiative reabsorption and subsequent photoluminescence (PL) within the perovskite layer. Contrary to the conventional down-conversion assumption, the green emission intensity diminishes with increasing injection current, while simultaneously exhibiting a substantial spectral narrowing and a fixed red-shift. Both UV and green bands show wavelength shifts and linewidth evolution that indicate complex light-matter interactions at the GaN/sapphire/perovskite interfaces, including nonlinear photon reabsorption, saturation of excitonic recombination, and cavity-modulated optical filtering. These findings redefine the role of perovskite coatings as more than passive converters and suggest their active photonic influence on emission dynamics in hybrid LED architectures. English 한국물리학회 Hybrid dual emission in perovskite-coated GaN-based ultraviolet light-emitting diodes Article 10.1007/s40042-025-01470-y 1 Journal of the Korean Physical Society, v.87, no.12, pp.1519 - 1527 Journal of the Korean Physical Society 87 12 1519 1527 N scie scopus kci 001575795800001 2-s2.0-105016812809 Physics, Multidisciplinary Physics Article GRAIN-BOUNDARIES QUANTIFICATION EFFICIENCY CH3NH3PbBr3 perovskite Electroluminescence spectrum Dual emission Radiative reabsorption Green emission narrowing GaN-based UV-LED