Kim, Miji Kotov, Dmytro Bae, Hyoin Kim, Bumjun Kim, Seong-Jin Lee, Changhyuk 2025-11-21T03:01:23Z 2025-11-21T03:01:23Z 2025-11-11 2025-12 0018-9383 https://pubs.kist.re.kr/handle/201004/153615 A Complementary metal-oxide--semiconduc- tor (CMOS) angle-sensitive, single-photon avalanche diode (ASPAD) sensor can extract plenoptic information from a single photon to enable lens-less optics based on computational methods. However, ASPAD sensors have been constrained by foundry metal stack designs, limiting their modulation gain. In this article, we propose a design methodology that significantly enhances the modulation gain by using vertical interconnect access (VIA) layers as an additional optical grating element. The metal-VIA grating structure reduces the pitch-wavelength-layer trade-off and extends the modulation range. Through measurement, we demonstrated modulation gain increase of up to 16.13% across various angle sensitivities. The design was manufactured using a standard CMOS 4M1P 110 nm process. English Institute of Electrical and Electronics Engineers Optimizing a CMOS Integrated Photon Counting Light-Field Sensor Based on Metal-VIA Multicomponent Grating Article 10.1109/TED.2025.3622095 1 IEEE Transactions on Electron Devices, v.72, no.12, pp.6842 - 6849 IEEE Transactions on Electron Devices 72 12 6842 6849 N scie scopus 001606766200001 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article Complementary metal-oxide--semicon- ductor (CMOS) computational imaging diffraction light field single-photon avalanche diode (SPAD)