Prasetiyawati, Rahma Dhani Song, Sehwan Kwon, Seyoung Choi, Min-Yeong Choi, Min Chul Lim, Woo Tack Park, Tuson Jang, Jae Hyuck Park, Sungkyun Park, Se Young Lee, Suyoun Choi, Woo Seok 2025-11-26T09:32:52Z 2025-11-26T09:32:52Z 2025-11-26 2025-11 1944-8244 https://pubs.kist.re.kr/handle/201004/153659 Magnetic transport properties are essential for probing the interaction between charge and spin dynamics. Those include the anomalous Hall effect (AHE) and topological Hall effect (THE), which are useful in the development of spintronic devices. SrRuO3 (SRO) offers an ideal platform for investigating the Hall effect, induced by robust ferromagnetism, and can be further manipulated by tuning the spin-orbit-coupled band structure near the Fermi level. In this study, we investigated how Mo doping enhances Hall resistivity (rho xy ), along with the emergence and engineering of the hump anomaly in rho xy of epitaxial SRO thin films. The tunable hump anomaly was attributed to the multi-domain AHE model based on spatial inhomogeneities and k-space Berry curvature. Our results present the underlying mechanism of hump formation and provide a feasible approach for enhancing the AHE of SRO films to boost the controllability of spintronic devices. English American Chemical Society Engineering Hall Resistivity Anomalies in Epitaxial SrRuO3 Thin Films by Mo Doping Article 10.1021/acsami.5c14336 1 ACS Applied Materials & Interfaces, v.17, no.46, pp.63540 - 63548 ACS Applied Materials & Interfaces 17 46 63540 63548 N scie scopus 001609339800001 2-s2.0-105022168259 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article anomalous Hall effect strontium ruthenate strontium molybdate Hall resistivity electrondoping Berry curvature