Ghods, Soheil Jang, Ho-Chan Choi, Jun-Hui Kim, Min Woo Lee, Hyunjin Kim, Tae-Hoon Heo, Keun Kwun, Hyung Jun Lee, Taehun Lee, Yoon Kyeung Lee, Sang Hoon Kim, Seung-Il Baek, Woonhyuk Bae, Sukang Moon, Ji-Yun Lee, Jae-Hyun 2025-11-26T09:41:18Z 2025-11-26T09:41:18Z 2025-11-26 2026-03 1616-301X https://pubs.kist.re.kr/handle/201004/153665 The continued miniaturization of electronic and optoelectronic devices places stringent demands on contact engineering for 2D semiconductors, particularly for p-type materials, where achieving low-resistance contacts remains a critical challenge. While van der Waals (vdW) contacts offer a promising route for next-generation electronics, the impact of microscopic interfacial phenomena on device performance remains insufficiently understood. Here, how selective charge injection is revealed to be governed by key interfacial parameters between WTe2, a topological vdW contact, and both Se- and S-based transition metal dichalcogenide (TMD) channel materials. Through device measurements and first-principles simulations, it is shown that WTe2 forms an exceptional vdW contact with p-type MoSe2, exhibiting an ultralow Schottky barrier height (approximate to 7 meV), low contact resistance (approximate to 0.47 k Omega mu m), and high carrier mobility (373 cm2 V-1 s-1). This selective charge injection is attributed to a larger interlayer distance in WTe2/Se-based TMDs, which suppresses orbital overlap and preserves interface quality. These microscopic descriptors serve as essential design principles for future 2D electronic and optoelectronic systems. English John Wiley & Sons Ltd. Selective Charge Injection via Topological van der Waals Contacts for Barrier-Free p-Type TMD Transistors Article 10.1002/adfm.202520506 1 Advanced Functional Materials, v.36, no.24 Advanced Functional Materials 36 24 Y scie scopus 2-s2.0-105021302373 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Early Access 2-DIMENSIONAL MATERIALS WAFER-SCALE MONOLAYER SEMIMETAL MOBILITY GAP contact resistance interlayer distance optoelectronics schottky barrier height T-vdW contact tungsten ditelluride