Liu, Pengfei Heo, Jae Won Bong, Hyeonmin Choe, Jinsik Lee, Huiyoung Lee, Won-Kyu Kim, Myung-Gil Son, Donghee Kang, Joohoon Eom, Taeyong Park, Sungjin Kim, In Soo 2025-12-19T07:00:11Z 2025-12-19T07:00:11Z 2025-12-19 2026-04 2631-7990 https://pubs.kist.re.kr/handle/201004/153798 With distinctive phase-change and switching properties, chalcogenide materials have emerged as critical components in various cutting-edge technologies. This review attempts to provide an overview of chalcogenide materials, from their fundamental properties to their diverse applications with focus on memory and sensing technologies, which are indispensable components in human-like electronic artificial sensory systems. After reviewing the synthesis and application of chalcogenide materials with respect to dimensionality, we focus on the key advances in (1) memory devices, including phase-change memory (PCM), ovonic threshold switching (OTS) selectors, and selector-only memory (SOM), and (2) sensing devices, including optical sensors, gas sensors, and neuromorphic sensors. Emphasis will be given on how chalcogenide materials can be integrated into next-generation systems, such as wearable platforms, artificial intelligence, and neuromorphic/quantum computing systems, to meet the growing demands for high-performance memory and multi-functional sensing. We also provide an overview of emerging research trends as well as a comprehensive perspective on the current status of research on chalcogenides. Finally, we attempt to provide insights into how chalcogenides can continue to drive technological breakthroughs in both memory and sensing applications while shaping the future landscape of intelligent systems, smart sensing platforms, and sustainable technology development. English IOP Publishing Synthesis of functional chalcogenide materials for memory/sensing devices and their integration into artificial sensory systems Article 10.1088/2631-7990/ae1db9 3 International Journal of Extreme Manufacturing, v.8, no.2 International Journal of Extreme Manufacturing 8 2 Y 001629245600001 2-s2.0-105023950536 Engineering, Manufacturing Materials Science, Multidisciplinary Engineering Materials Science Review ATOMIC LAYER DEPOSITION CHEMICAL-VAPOR-DEPOSITION OVONIC THRESHOLD SWITCH THIN-FILM METAL CHALCOGENIDES GE2SB2TE5 FILMS GLASS MOS2 CHEMISTRY NONLINEAR-OPTICAL PROPERTIES materials synthesis device integration artificial sensory system phase-change memory sensing modalities functional chalcogenides