Park, Sung-Yul L. Tikhonov, Illia Park, Suk In Park, Donghee Song, Jin-Dong 2025-12-19T07:01:40Z 2025-12-19T07:01:40Z 2025-12-19 2025-12 1528-7483 https://pubs.kist.re.kr/handle/201004/153808 The structural and optical properties of 3 monolayer (ML) thick InAs quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), conventional molecular beam epitaxy (CON), and hybrid methods combining the two were investigated. The hybrid approaches included QD growth initiated with MEE and terminated with CON (MEE-CON) and the reverse sequence (CON-MEE). The results indicate that the deposition method used for the final 1 ML of InAs critically influences the structural and optical properties of the QDs. QDs with MEE termination on CON-initiated layers exhibited structural and optical features comparable to those grown entirely by MEE, and similar for the reverse case. These findings demonstrate that the final growth stage plays a decisive role in defining QD properties, regardless of the initial growth method. English American Chemical Society Effects of Termination Process on the Structural and Optical Properties InAs Quantum Dots on GaAs Article 10.1021/acs.cgd.5c00480 1 Crystal Growth & Design, v.25, no.24, pp.10298 - 10305 Crystal Growth & Design 25 24 10298 10305 N scie scopus 001629369100001 Chemistry, Multidisciplinary Crystallography Materials Science, Multidisciplinary Chemistry Crystallography Materials Science Article TEMPERATURE-DEPENDENCE GROWTH LASERS LAYER PHOTOLUMINESCENCE DEPOSITION 1.3-MU-M