Son, Minki Kang, Yeo Kyung Kim, Jaesung Cho, Jae-hyeok Le, Minh Nhut Kwon, Semin Seon, Yeong-min Kim, Choongik Kim, Byunghoon Kim, Yunseok Kim, In Soo Son, Donghee Ahn, Kyunghan Noh, Yong-young Kim, Myung-gil 2025-12-23T06:30:50Z 2025-12-23T06:30:50Z 2025-12-19 2025-11 1616-301X https://pubs.kist.re.kr/handle/201004/153861 Advancement of transparent electronics is limited by the lack of stable wide-bandgap p-type semiconductors. Although copper iodide (CuI) shows potential in transparent p-type thin-film transistors (TFTs), controlling carrier concentration and chemical stability remains challenging. Here, it is demonstrated that cadmium (Cd) doping effectively suppresses hole concentration and enhances the air stability of CuI thin films. The incorporation of chemically soft Cd2⁺ ions improve environmental robustness, enabling conventional photolithography under ambient conditions. Optimized 4.0% Cd-doped CuI TFT exhibits a saturation mobility of 5.58 ± 0.71 cm2 V−1 s−1, an Ion/Ioff ratio of 107, and improved negative bias stability (ΔVth = 1.9 V at 2 MV cm−1 for 3600 s). Furthermore, a 7-stage ring oscillator using CuI:Cd film patterned via standard photolithography in air exhibits an operating frequency of 138.38 kHz with a propagation delay of 7.66 µs at a β-ratio of 5:1, highlighting its potential for industrial application of transparent electronics. English John Wiley & Sons Ltd. High-Performance Transparent p-Type Thin-Film Transistor and Circuit with Air-Stable CuI:Cd Article 10.1002/adfm.202520710 1 Advanced Functional Materials Advanced Functional Materials N scie scopus 2-s2.0-105023326974 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Early Access PHOTOELECTRON circuits copper iodide thin-film transistors transparent p-type semiconductors