Yeon, Eungbeom Woo, Seungwan Mo, Jeongeun Hong, Sukkyu Son, Hoki Lee, In-Hwan Jung, Dae hwan Choi, Won Jun 2026-03-09T05:00:04Z 2026-03-09T05:00:04Z 2026-03-09 2026-03 https://pubs.kist.re.kr/handle/201004/154408 SWIR optoelectronics has attracted attention for the potential applications such as laser radar, chemical sensing, and atmospheric window systems. Among suitable diodes for SWIR applications, Sb-based laser diodes (LDs) are ideal candidates due to their high-power efficiency, low threshold current density, and high-temperature stability. This work reports the low-threshold current density SWIR LD via detailed growth optimization of active region, which consists of InGaAsSb quaternary quantum wells (QWs). Firstly, optimal QWs growth temperature of 450 °C, a V/III ratio of 5, and an Sb cracker temperature of 700 °C for In0.24Ga0.76Sb QWs are identified with photoluminescence (PL) measurement. The optimized structure exhibited strong PL emission of ∼2.1 μm wavelength at room-temperature. As a result, the low-threshold current density SWIR InGaAsSb double-QWs LDs show a threshold current density of 125 A/cm², and a lasing spectrum of 2.08 μm, without AR/HR coatings and p-side down mounting. These LDs show diode performance comparable to state-of-the-art devices in terms of threshold current density. These results highlight the critical role of detailed growth control of QW active region in realizing low-threshold current density SWIR LDs. English Elsevier BV Low-threshold SWIR GaSb-based MQW laser diodes enabled by optimized growth of active region Article 10.1016/j.mtcomm.2026.114943 1 Materials Today Communications, v.52 Materials Today Communications 52 N scie scopus 001712741900001 Materials Science, Multidisciplinary Materials Science Article MU-M OPERATION POWER Short-wavelength infrared Quantum wells Antimonides Laser diodes Molecular beam epitaxy