Park, Sung-Yul L. Park, Suk In Han, Il Ki Kim, Kwang-Chon Wang, Qin Pettersson, Hakan Song, Jin-Dong 2026-03-27T01:30:16Z 2026-03-27T01:30:16Z 2026-03-24 2026-03 1528-7483 https://pubs.kist.re.kr/handle/201004/154480 The formation of InSb quantum dots (QDs) embedded in an InAs matrix grown by molecular beam epitaxy (MBE) was studied parametrically. In particular, the effect of the sequence of the change of As2 dimers and Sb2 on the distribution of As and Sb at the InSb-QDs/InAs interface was investigated by cross-sectional transmission electron microscopy (TEM). It was shown that additional As2 above the InSb QDs results in the disappearance of InSb, while additional Sb2 enhances the size of the InSb QDs. The specific growth method, Stranski–Krastanov (S–K) or migration-enhanced epitaxy (MEE), also affects the shape of the QDs. The cross-sectional TEM images were investigated with geometrical phase analysis (GPA) as a function of the InSb coverage. Photoluminescence spectroscopy on samples comprising 21 stacked InSb QD layers revealed a strong emission peak at about 4 μm (77 K). English American Chemical Society Parametric Study on the Growth of Type-II InSb Quantum Dots on InAs Substrates by Molecular Beam Epitaxy Article 10.1021/acs.cgd.5c01302 1 Crystal Growth & Design, v.26, no.6, pp.2262 - 2270 Crystal Growth & Design 26 6 2262 2270 N scie scopus Chemistry, Multidisciplinary Crystallography Materials Science, Multidisciplinary Chemistry Crystallography Materials Science Article; Early Access PHOTOLUMINESCENCE MATRIX