Ryu, Huije Kim, Dong­Hyun Kwon, Junyoung Park, Sang Kyu Lee, Wanggon Seo, Hyungtak Watanabe, Kenji Taniguchi, Takashi Kim, SunPhil Zande, Arend M. Son, Jang yup Lee, Gwan­Hyoung 2024-01-12T02:37:06Z 2024-01-12T02:37:06Z 2022-03-14 2022-10 2199-160X https://pubs.kist.re.kr/handle/201004/76011 Realizing a future of 2D semiconductor-based devices requires new approaches to channel passivation and nondestructive contact engineering. Here, a facile one-step technique is shown that simultaneously utilizes monolayer fluorinated graphene (FG) as the passivation layer and contact buffer layer to 2D semiconductor transistors. Monolayer graphene is transferred onto the MoS2, followed by fluorination by XeF2 gas exposure. Metal electrodes for source and drain are fabricated on top of FG-covered MoS2 regions. The MoS2 transistor is perfectly passivated by insulating FG layer and, in the contacts, FG layer also acts as an efficient charge injection layer, leading to the formation of Ohmic contacts and high carrier mobility of up to 64 cm(2) V-1 s(-1) at room temperature. This work shows a novel strategy for simultaneous fabrication of passivation layer and low-resistance contacts by using ultrathin functionalized graphene, which has applications for high performance 2D semiconductor integrated electronics. English Wiley-VCH Verlag Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors Article 10.1002/aelm.202101370 1 Advanced Electronic Materials, v.8, no.10 Advanced Electronic Materials 8 10 N scie scopus 000766451600001 2-s2.0-85126059219 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article 2D materials heterostructure electrical passivation fluorination graphene MoS (2)