Jang, Juntae Kim, Jae-Keun Shin, Jiwon Kim, Jaeyoung Baek, Kyeong-Yoon Park, Jaehyoung Park, Seungmin Kim, Young Duck Parkin, Stuart S. P. Kang, Keehoon Cho, Kyungjune Lee, Takhee 2024-01-12T02:37:13Z 2024-01-12T02:37:13Z 2022-10-24 2022-09 https://pubs.kist.re.kr/handle/201004/76015 Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping of semiconductors, including TMDCs, typically involves generation of charged dopants that hinder charge transport, tackling Coulomb scattering induced by the externally introduced dopants remains a key challenge in achieving ultrahigh mobility 2D semiconductor systems. In this study, we demonstrated remote charge transfer doping by simply inserting a hexagonal boron nitride layer between MoS2 and solution-deposited n-type dopants, benzyl viologen. A quantitative analysis of temperature-dependent charge transport in remotely doped devices supports an effective suppression of the dopant-induced scattering relative to the conventional direct doping method. Our mechanistic investigation of the remote doping method promotes the charge trans-fer strategy as a promising method for material-level tailoring of electrical and optoelectronic devices based on TMDCs. English American Association for the Advancement of Science Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors Article 10.1126/sciadv.abn3181 1 Science Advances, v.8, no.38 Science Advances 8 38 Y scie scopus 000885315600004 Multidisciplinary Sciences Science & Technology - Other Topics Article 2D MATERIALS MOLYBDENUM-DISULFIDE MONOLAYER MOBILITY TRANSITION TRANSPORT GRAPHENE CONTACT BARRIER SUPERCONDUCTIVITY