Kizilkan, E. Karaca, U. Pesic, V. Lee, M. -J. Bruschini, C. SpringThorpe, A. J. Walker, A. W. Flueraru, C. Pitts, O. J. Charbon, E. 2024-01-12T02:45:13Z 2024-01-12T02:45:13Z 2023-11-30 2023-09 1930-8876 https://pubs.kist.re.kr/handle/201004/76388 We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match well with the measurement results of our novel selective area growth (SAG) based InGaAs/InP SPAD. An optimized simulation environment has the potential of estimating the device performance without costly fabrication iterations. Hence, it will accelerate the development of high-performance InGaAs/InP SPADs. English IEEE Extended Temperature Modeling of InGaAs/InP SPADs Conference 10.1109/ESSDERC59256.2023.10268545 1 IEEE 53rd European Solid-State Device Research Conference (ESSDERC), pp.140 - 143 IEEE 53rd European Solid-State Device Research Conference (ESSDERC) 140 143 US Lisbon, PORTUGAL 2023-09-11 IEEE 53RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, ESSDERC 2023 001090588900035 2-s2.0-85175466559