Sharma, Aditya Devi, Ksh. Devarani Varshney, Mayora Saraswat, Himani Chaudhary, Surekha Lee, Byeong-hyeon 김소희 Won, Sung Ok CHAE, KEUN HWA Vij, Ankush Sharma, Ram K. Shin, Hyun-Joon 2024-01-12T03:31:22Z 2024-01-12T03:31:22Z 2022-02-23 2022-05 0361-5235 https://pubs.kist.re.kr/handle/201004/76740 SrVO3 films have been deposited on quartz substrates using radiofrequency (RF) sputtering technique. Ag- ions have been implanted with three fluences: 1 x 10(15) ions/cm(2), 3 x 10(15) ions/cm(2), and 5 x 10(15) ions/cm(2). The glancing-angle x-ray diffraction (GIXRD) results exhibited a decrease in the peak intensity; however, the results ruled out the possibility of other secondary phase formation upon increasing the Ag- ion fluence. Field emission scanning electron microscopy (FESEM) results revealed that Ag implantation has sputtered the surface layer and created rough/emptied films. Significant broadening/splitting of V L-2 near-edge x-ray absorption fine structure (NEXAFS) spectra convey the incorporation of Ag 4d states in the energy band structure of SrVO3 and electronic transitions from V 2p(1/2) states to the Ag-related states. O K-edge spectra have ruled out the charge transfer of O 1s orbits to the Ag states, even upon increasing the Ag concentration, and nullified the formation of AgO types of secondary phases. English Institute of Electrical and Electronics Engineers Structural, Surface, and Electronic Structure Properties of Ag Ion-Implanted SrVO3 Thin Films Article 10.1007/s11664-022-09454-5 1 Journal of Electronic Materials, v.51, no.5, pp.1900 - 1904 Journal of Electronic Materials 51 5 1900 1904 N scie scopus 000756197600002 2-s2.0-85124995383 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article; Early Access SrVO3 implantation defects NEXAFS