Jeong, In ho Kyungjune, Cho Seobin Yun Jiwon Shin Jaeyoung Kim Gyu Tae Kim Takhee Lee 정승준 2024-01-12T03:31:32Z 2024-01-12T03:31:32Z 2022-06-07 2022-04 1936-0851 https://pubs.kist.re.kr/handle/201004/76747 Surface charge transfer doping (SCTD) has been regarded as an effective approach to tailor the electrical characteristics of atomically thin transition metal dichalcogenides (TMDs) in a nondestructive manner due to their twodimensional nature. However, the difficulty of achieving rationally controlled SCTD on TMDs via conventional doping methods, such as solution immersion and dopant vaporization, has impeded the realization of practical optoelectronic and electronic devices. Here, we demonstrate controllable SCTD of molybdenum disulfide (MoS2) field-effect transistors using inkjet-printed benzyl viologen (BV) as an n-type dopant. By adjusting the BV concentration and the areal coverage of inkjet-printed BV dopants, controllable SCTD results in BV-doped MoS2 FETs with elaborately tailored electrical performance. Specifically, the suggested solvent system creates well-defined droplets of BV ink having a volume of similar to 2 pL, which allows the high spatial selectivity of SCTD onto the MoS2 channels by depositing the BV dopant on demand. Our inkjetprinted SCTD method provides a feasible solution for achieving controllable doping to modulate the electrical and optical performances of TMD-based devices. English American Chemical Society Tailoring the Electrical Characteristics of MoS2 FETs through Controllable Surface Charge Transfer Doping Using Selective Inkjet Printing Article 10.1021/acsnano.2c00021 1 ACS Nano, v.16, no.4, pp.6215 - 6223 ACS Nano 16 4 6215 6223 N scie scopus 000813149700001 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article TRANSITION-METAL DICHALCOGENIDES FEW-LAYER MOS2 REDUCTION VIOLOGEN WS2 molybdenum disulfide chemical doping surface charge transfer doping inkjet printing field-effect transistor