Jaeyoung Kim Kyungjune, Cho Jinsu Pak Woocheol Lee Junseok Seo Jae-Keun Kim Jiwon Shin Juntae Jang Kyeong-Yoon Baek Jonghoon LeeJonghoon Lee Chung, Seung jun Keehoon Kang Takhee Lee 2024-01-12T03:31:33Z 2024-01-12T03:31:33Z 2022-06-07 2022-04 1936-0851 https://pubs.kist.re.kr/handle/201004/76748 Recently there has been growing interest in avalanche multiplication in two-dimensional (2D) materials and device applications such as avalanche photodetectors and transistors. Previous studies have mainly utilized unipolar semiconductors as the active material and focused on developing high-performance devices. However, fundamental analysis of the multiplication process, particularly in ambipolar materials, is required to establish high-performance electronic devices and emerging architectures. Although ambipolar 2D materials have the advantage of facile carrier-type tuning through electrostatic gating, simultaneously allowing both carrier types in a single channel poses an inherent difficulty in analyzing their individual contributions to avalanche multiplication. In ambipolar field-effect transistors (FETs), two phenomena of ambipolar transport and avalanche multiplication can occur, and both exhibit secondary rise of output current at high lateral voltage. We distinguished these two competing phenomena using the method of channel length modulation and successfully analyzed the properties of electron- and hole-initiated multiplication in ambipolar WSe2 FETs. Our study provides a simple and robust method to examine carrier multiplication in ambipolar materials and will foster the development of high-performance atomically thin electronic devices utilizing avalanche multiplication. English American Chemical Society Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe2 Field-Effect Transistors Article 10.1021/acsnano.1c08104 1 ACS Nano, v.16, no.4, pp.5376 - 5383 ACS Nano 16 4 5376 5383 N scie scopus 000813109000001 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article IMPACT IONIZATION COEFFICIENTS RATES ELECTRONS HOLES OPTOELECTRONICS SILICON 2D materials WSe2 field-effect transistors avalanche multiplication ambipolar transport