강수석 Ahn, Dae hwa 이인호 최원준 SONG, JIN DONG Han, Jae-Hoon 2024-01-12T03:33:00Z 2024-01-12T03:33:00Z 2022-01-18 2021-12 1094-4087 https://pubs.kist.re.kr/handle/201004/76817 Although an InGaAs photo field-effect transistor (photo-FET) is a promising solution for high-performance photodetector due to its internal gain mechanism, the reported opto-electrical performance is limited by the low absorption caused by its thin body thickness and unoptimized electrical properties. To overcome this limitation, an InGaAs photo-FET with a metal gate reflector was demonstrated to achieve both high electrical and optical performance. We designed and optimized a metal-oxide-semiconductor (MOS) structure with the metal gate reflector by using numerical calculation and process optimization. Thanks to the optimization of both electrical and optical characteristics, the InGaAs photo-FETs were successfully demonstrated at the wavelengths of 1305 nm and 1550 nm. Therefore, this wafer-bonded InGaAs photo-FET with the metal gate reflector is a promising candidate for a high-performance and broad-band SWIR photodetector on a Si CMOS platform. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. English Optical Society of America Cavity-enhanced InGaAs photo-FET with a metal gate reflector fabricated by wafer bonding on Si Article 10.1364/OE.443673 1 Optics Express, v.29, no.26, pp.42630 - 42641 Optics Express 29 26 42630 42641 Y scie scopus 000730136600024 2-s2.0-85120855053 Optics Optics Article PHOTODIODES GRAPHENE MOSFET INP AVALANCHE BREAKDOWN PHOTODETECTOR