Shim, Joonsup Lim, Jinha Geum, Dae-Myeong You, Jong-Bum Yoon, Hyeonho Kim, Joon Pyo Baek, Woo Jin Han, Jae-Hoon Kim, SangHyeon 2024-01-12T03:43:21Z 2024-01-12T03:43:21Z 2022-11-16 2022 0277-786X https://pubs.kist.re.kr/handle/201004/77263 We experimentally demonstrate the free-carrier absorption (FCA)-assisted photodetection using a waveguide-integrated bolometer on the silicon-on-insulator (SOI) platform at the near-infrared range (1520-1620 nm). A heavily-doped silicon (n(+) Si) plays a role as an efficient light absorption medium, which exploits the mechanism of FCA in Si. For the thermal-to-electrical conversion, a bolometric material of TiOx/Ti/TiOx tri-layer film is integrated onto the n(+) Si. It offers a sensitivity of -26.75 %/mW with a highly flat spectral response. In addition, a clear on/off bolometric response with the 1 kHz-modulated optical signal was obtained with the rise and fall times of 24.2 mu s and 29.2 mu s, respectively, which is enough for diverse sensing applications. English SPIE-INT SOC OPTICAL ENGINEERING Free-carrier absorption-assisted photodetection using a waveguide-integrated bolometer with flat spectral response for integrated optical sensors Conference 10.1117/12.2632304 1 Conference on Infrared Sensors, Devices, and Applications XII Conference on Infrared Sensors, Devices, and Applications XII US San Diego, CA 2022-08-24 INFRARED SENSORS, DEVICES, AND APPLICATIONS XII 000878106800010