CHANGWOO LEE Park Chang Seon JUNG WON JUN Min Park Dong Su Lee Dae-Young Jeon 2024-01-12T03:46:11Z 2024-01-12T03:46:11Z 2021-09-29 2021-06 - https://pubs.kist.re.kr/handle/201004/77406 Semiconducting two-dimensional (2-D) transition metal dichalcogenides (TMDs) materials, such as MoS2 and WSe2, have promising advantages such as good surface roughness without dangling bonds, diverse electronic and optical properties with the desired value of bandgap. In particular, multi-layer MoS2 has great potential for advanced field-effect transistors (FETs). In this work, multi-layer MoS2 FETs were fabricated by using mechanical exfoliation method and selective patterning process with an alignment technique. Then, the fabricated devices were treated by a systematic reactive ion etching (RIE) with CF4 plasma. A dramatically improved ratio of on-current to off-current (Ion/Ioff) has been investigated in the device with MoS2 channel thinned by the RIE process. Channel doping concentration (Nd), MoS2 thickness measured by atomic force microscope (AFM) and maximum depletion width (Dmax) were also discussed in detail to verify experimental results. Our work provides important information for the development of energy efficient electronic devices with optimal channel thickness, as well as better understanding the switching operation of MoS2 FETs. English 한국전기전자재료학회 semiconducting 2-D TMDs materials MoS2 FETs reactive ion etching with CF4 plasma controlled channel-thickness Ion/Ioff ratio Enhanced Ion/Ioff ratio of multi-layer MoS2 field-effect transistors treated by reactive ion etching process 반응성 이온 에칭 공정으로 처리 된 다층 MoS2 전계 효과 트랜지스터의 향상된 Ion / Ioff 비율 Conference 2 2021 한국전기전자재료학회 하계학술대회 2021 한국전기전자재료학회 하계학술대회 KO 강원도 평창 알펜시아리조트 2021-06-30