Kuk, Song-hyeon Han, Seung-min Kim, Bong-ho Baek, Seung-Hyub Han, Jae-hoon Kim, Sang-hyeon 2024-01-12T04:08:39Z 2024-01-12T04:08:39Z 2022-07-15 2021 2380-9248 https://pubs.kist.re.kr/handle/201004/77782 We report a comprehensive understanding of HZO based n/pFeFET operation using (double-pulsed) quasi-static CV and pulsed IV techniques, providing the true nonvolatile polarization and excess trap density, which has not been reported yet. Also, we conceived new insight into the trapped charge and polarization switching by the method, based on the asymmetry of electron/hole trapping in n/pFeFET. Through the analysis, we propose a new erasing operation, resulting in enhanced performance (ex. endurance > 10(10) cycles), and also proposed physical models of the n/pFeFET operation. English IEEE Comprehensive Understanding of the HZO-based n/pFeFET Operation and Device Performance Enhancement Strategy Conference 10.1109/IEDM19574.2021.9720642 2 IEEE International Electron Devices Meeting (IEDM) IEEE International Electron Devices Meeting (IEDM) US San Francisco, CA 2021-12-11 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 000812325400143